The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Feb. 14, 2017
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Toshiki Fujino, Toyama, JP;

Yuma Fujii, Toyama, JP;

Kazuki Nonomura, Toyama, JP;

Yoshinori Baba, Toyama, JP;

Yuji Takebayashi, Toyama, JP;

Kenichi Suzaki, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/46 (2006.01); B05B 7/16 (2006.01); H01L 21/67 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
B05B 7/1693 (2013.01); C23C 16/4401 (2013.01); C23C 16/45578 (2013.01); C23C 16/46 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01);
Abstract

A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.


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