The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Sep. 04, 2020
Applicant:
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Inventors:
Vincent Gambin, Rancho Palos Verdes, CA (US);
Rachel A. Koltun, Hermosa Beach, CA (US);
Benjamin Heying, Fullerton, CA (US);
Assignee:
NORTHROP GRUMMAN SYSTEMS CORPORATION, Falls Church, VA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1206 (2013.01); H01L 45/06 (2013.01); H01L 45/1226 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01);
Abstract
An exemplary semiconductor incorporates phase change material MoWTethat may be the semiconducting channel or may be part of a control terminal/gate of the semiconductor. The phase change material selectably being in one of metal and insulator phases depending on whether a voltage field greater than a predetermined phase change field is present at the phase change material. The properties of the semiconductor are varied depending on the phase of the phase change material.