The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Feb. 25, 2020
Applicant:

Facebook Technologies, Llc, Menlo Park, CA (US);

Inventors:

Thomas Lauermann, Cork, IE;

Stephan Lutgen, Dresden, DE;

David Hwang, Cork, IE;

Assignee:

FACEBOOK TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 51/52 (2006.01); G02B 27/01 (2006.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); G02B 27/0172 (2013.01); H01L 33/44 (2013.01); H01L 51/52 (2013.01);
Abstract

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 μm. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.


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