The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Oct. 15, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Philip Hsin-hua Li, San Jose, CA (US);

Seshadri Ramaswami, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/109 (2006.01); H01L 31/032 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); H01L 31/032 (2013.01); H01L 31/0322 (2013.01); H01L 31/18 (2013.01);
Abstract

Embodiments disclosed herein include photodiodes and methods of forming such photodiodes. In an embodiment, a method of creating a photodiode, comprises disposing an absorber layer over a first contact, wherein the absorber layer comprises a first conductivity type, and disposing a semiconductor layer over the absorber, wherein the semiconductor layer has a second conductivity type that is opposite from the first conductivity type. In an embodiment, the method further comprises disposing a hole blocking layer over the semiconductor layer, wherein the hole blocking layer is formed with a reactive sputtering process with a processing gas that comprises oxygen, and disposing a second contact over the hole blocking layer.


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