The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Aug. 30, 2018
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Akihiro Goryu, Kanagawa, JP;

Akira Kano, Kanagawa, JP;

Kenji Hirohata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/04 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); G11B 7/126 (2012.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); G11B 7/126 (2013.01); G11C 13/048 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01);
Abstract

A semiconductor storage device comprises a plurality of memory cells arranged in a matrix. Each of the memory cells includes: a semiconductor storage element including a silicon carbide substrate and a silicon carbide film on a first surface of the silicon carbide substrate; a lower electrode on a second surface facing away from the first surface of the silicon carbide substrate; and an upper electrode on at least part of a surface of the silicon carbide film, the surface facing away from another surface of the silicon carbide film in contact with the silicon carbide substrate. Each memory cell includes at least one basal plane dislocation formed at at least part of the semiconductor storage element.


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