The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Apr. 19, 2018
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Allen W. Hanson, Cary, NC (US);

Wayne Mack Struble, Franklin, MA (US);

John Claassen Roberts, Hillsborough, NC (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/06 (2006.01); H01L 29/20 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/761 (2006.01); H01L 33/00 (2010.01); H01L 21/8252 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0646 (2013.01); H01L 21/56 (2013.01); H01L 21/761 (2013.01); H01L 23/3171 (2013.01); H01L 27/0605 (2013.01); H01L 29/2003 (2013.01); H01L 33/0095 (2013.01); H01L 21/8252 (2013.01);
Abstract

Structures and methods for isolating semiconductor devices and improving device reliability under harsh environmental conditions are described. An isolation region may be formed by ion implantation in a region of semiconductor surrounding a device. The implantation region may extend into streets of a wafer. A passivation layer may be deposited over the implantation region and extend further into the streets than the isolation region to protect the isolation region from environmental conditions that may adversely affect the isolation region.


Find Patent Forward Citations

Loading…