The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Jun. 24, 2019
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Richard Scott Burton, Phoenix, AZ (US);

Karel Ptacek, Roznov Pod Radhostem, CZ;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 27/0805 (2013.01);
Abstract

In accordance with an embodiment, an electrical element includes a first portion of a first dielectric material between a first portion of a first electrical conductor and a first portion of a second electrical conductor and a second portion of the first dielectric material between a second portion of the first electrical conductor and a first portion of a third electrical conductor. In accordance with another embodiment, an electrical component has a plurality of dopant regions formed in a semiconductor material, where the dopant regions include a plurality of dopant regions formed in a dopant region of the same conductivity type. A plurality of dopant regions of an opposite conductivity type are formed in corresponding dopant regions of the first conductivity type. A metallization system is formed over the semiconductor material, where a portion of the metallization system contacts the semiconductor material.


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