The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Sep. 14, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Yuta Watanabe, Yokkaichi, JP;

Fumitaka Arai, Yokkaichi, JP;

Katsuyuki Sekine, Yokkaichi, JP;

Toshiyuki Iwamoto, Mie, JP;

Wataru Sakamoto, Yokkaichi, JP;

Tatsuya Kato, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 21/28 (2006.01); H01L 29/788 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/10 (2006.01); H01L 21/285 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/02636 (2013.01); H01L 21/31111 (2013.01); H01L 29/1037 (2013.01); H01L 29/40114 (2019.08); H01L 29/7889 (2013.01); H01L 21/0262 (2013.01); H01L 21/02148 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/28568 (2013.01); H01L 21/3065 (2013.01); H01L 29/7883 (2013.01);
Abstract

A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar and the second electrode, and a second insulating film provided between the first electrode and the second electrode. The second electrode includes a thin sheet portion disposed on the first electrode side, and a thick sheet portion disposed on the semiconductor pillar side. A length in the first direction of the thick sheet portion is longer than a length in the first direction of the thin sheet portion.


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