The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Jun. 11, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sangnam Jeong, Hwaseong-si, KR;

IlJoon Kim, Seoul, KR;

SunWon Kang, Seongnam-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 23/50 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 25/16 (2013.01); H01L 23/481 (2013.01); H01L 23/50 (2013.01); H01L 23/5223 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/17 (2013.01); H01L 23/49816 (2013.01); H01L 23/5385 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/0616 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/08265 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/1412 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/17181 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19104 (2013.01);
Abstract

Disclosed is a semiconductor package including a semiconductor chip, a first outer capacitor on the semiconductor chip including a first electrode and a second electrode, a second outer capacitor on the semiconductor chip including a first electrode pattern and a second electrode pattern, and a conductive pattern on the semiconductor chip and electrically connected to the first electrode of the first outer capacitor and the first electrode pattern of the second outer capacitor. The second electrode of the first outer capacitor is insulated from the second electrode pattern of the second outer capacitor.


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