The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Apr. 18, 2019
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventor:
Ali Salih, Mesa, AZ (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/324 (2006.01); H01L 21/322 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3245 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02675 (2013.01); H01L 21/3228 (2013.01); H01L 29/2003 (2013.01); H01L 29/66742 (2013.01); H01L 29/7886 (2013.01); H01L 29/78681 (2013.01); H01L 21/3221 (2013.01);
Abstract
Systems and methods of the disclosed embodiments include reducing defects in a semiconductor layer. The defects may be reduced by forming the semiconductor layer on a substrate, removing at least a portion the substrate from an underside of the semiconductor layer, and annealing the semiconductor layer to reduce the defects in the layer. The annealing includes focusing energy at the layer.