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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11018002 B1

PDFFull Text
Date of Patent:
May. 25, 2021

Filed:

Jun. 05, 2018

Method for selectively depositing a group iv semiconductor and related semiconductor device structures

Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Joe Margetis, Gilbert, AZ (US);

John Tolle, Gilbert, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:

Snell & Wilmer L.L.P.

Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 23/535 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02579 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/28518 (2013.01); H01L 21/823814 (2013.01); H01L 23/535 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/45 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method for selectively depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The method may further include, exposing the substrate to at least one Group IV precursor, and exposing the substrate to at least one Group IIIA halide dopant precursor. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

Find Patent Forward Citations

Margetis, Joe. (2021). Method for selectively depositing a group iv semiconductor and related semiconductor device structures (U.S. Patent No. 11018002). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11018002

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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