The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Jun. 06, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sanjeev Baluja, Campbell, CA (US);

Yi Yang, San Jose, CA (US);

Truong Nguyen, Milpitas, CA (US);

Nattaworn Boss Nunta, Stanford, CA (US);

Joseph F. Aubuchon, San Jose, CA (US);

Tuan Anh Nguyen, San Jose, CA (US);

Karthik Janakiraman, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); C23C 16/44 (2006.01); C23C 16/509 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); C23C 16/401 (2013.01); C23C 16/4401 (2013.01); C23C 16/4557 (2013.01); C23C 16/45512 (2013.01); C23C 16/45561 (2013.01); C23C 16/45565 (2013.01); C23C 16/50 (2013.01); C23C 16/5096 (2013.01); C23C 16/52 (2013.01); H01J 37/3244 (2013.01); H01J 37/32522 (2013.01); C23C 16/45574 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3323 (2013.01);
Abstract

Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.


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