The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
May. 13, 2019
Applicant:
Reno Technologies, Inc., Wilmington, DE (US);
Inventor:
Anton Mavretic, Natick, MA (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H02M 3/335 (2006.01); H03H 7/40 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H03K 17/687 (2006.01); H01L 49/02 (2006.01); H03H 7/38 (2006.01); H04B 1/44 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01); H03K 17/691 (2006.01); H03K 17/795 (2006.01); H03K 17/10 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32082 (2013.01); H01L 21/02274 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H01L 29/861 (2013.01); H02M 3/33569 (2013.01); H03H 7/38 (2013.01); H03H 7/40 (2013.01); H03K 17/687 (2013.01); H04B 1/44 (2013.01); H01J 2237/334 (2013.01); H03K 17/102 (2013.01); H03K 17/691 (2013.01); H03K 17/7955 (2013.01); H03K 2017/6875 (2013.01);
Abstract
In one embodiment, an RF power amplifier includes a first transistor and a second transistor in parallel, wherein a gate of the first transistor and a gate of the second transistor are configured to be driven by an RF source. A third transistor comprising a drain is operably coupled to both a source of the first transistor and a source of the second transistor. A control circuit is operably coupled to a gate of the third transistor and configured to alter a gate-to-source voltage of the third transistor, thereby altering a drain current of each of the first transistor and the second transistor, thereby altering an output power of the RF power amplifier.