The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Aug. 22, 2019
Applicant:

Seagate Technology Llc, Cupertino, CA (US);

Inventors:

Kurt Walter Getreuer, Colorado Springs, CO (US);

Darshana H. Mehta, Shakopee, MN (US);

Antoine Khoueir, Apple Valley, MN (US);

Christopher Joseph Curl, Colorado Springs, CO (US);

Assignee:

Seagate Technology LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); H03M 13/11 (2006.01); G06F 11/07 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 11/076 (2013.01); G06F 11/0727 (2013.01); G06F 11/0793 (2013.01); G11C 11/5628 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01); H03M 13/1111 (2013.01);
Abstract

Method and apparatus for managing data in a non-volatile memory (NVM) of a storage device, such as a solid-state drive (SSD). In some embodiments, first data are read from the NVM using an initial set of read voltages over a selected range of cross-temperature differential (CTD) values comprising a difference between a programming temperature at which the first data are programmed to the NVM cells and a reading temperature at which the first data are subsequently read from the NVM cells. A master set of read voltages is thereafter selected that provides a lowest acceptable error rate performance level over the entirety of the CTD range, and the master set of read voltages is thereafter used irrespective of NVM temperature. In some cases, the master set of read voltages may be further adjusted for different word line addresses, program/erase counts, read counts, data aging, etc.


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