Apparatus and method for non-volatile memory for applying voltages to selected and unselected strings during the channel initialization for improved read operation

Abstract

A memory device and an operating method thereof are provided. A memory device includes a memory cell array including a plurality of strings, a voltage generating circuit configured to apply a turn-on voltage to the plurality of strings during a predetermined time period during a channel initialization operation of a read operation of a selected string among the plurality of strings, and control logic configured to set the predetermined time period of applying the turn-on voltage to the plurality of strings and to control the voltage generating circuit to apply the turn-on voltage to the plurality of strings during the predetermined time period, wherein the control logic sets the predetermined time period corresponding to the selected string as a first time period and the predetermined time period corresponding to unselected strings among the plurality of strings to be shorter than the first time period.