The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Nov. 19, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Vladislav Komenko, Dresden, DE;

Heiko Froehlich, Radebeul, DE;

Thoralf Kautzsch, Dresden, DE;

Andrey Kravchenko, Dresden, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/34 (2006.01); G01J 5/40 (2006.01); H01L 31/18 (2006.01); H01L 27/146 (2006.01); G01J 5/08 (2006.01);
U.S. Cl.
CPC ...
G01J 5/34 (2013.01); G01J 5/0853 (2013.01); G01J 5/40 (2013.01); H01L 27/14649 (2013.01); H01L 31/18 (2013.01);
Abstract

An infrared radiation sensor comprises a substrate, a membrane formed in or at the substrate, a first counter electrode, a second counter electrode, and a composite comprising at least two layers of materials having different coefficients of thermal expansion. At least a portion of the membrane forms a deflectable electrode and the deflectable electrode is electrically floating. A first capacitance is formed between the deflectable electrode and the first counter electrode, and a second capacitance is formed between the deflectable electrode and the second counter electrode. The membrane comprises the composite or is supported at the substrate by the composite. The membrane comprises an absorption region configured to cause deformation of the composite by absorbing infrared radiation, the deformation resulting in a deflection of the deflectable electrode, which causes a change of the first and second capacitances.


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