The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Nov. 01, 2019
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Hiroaki Ishiwata, Tokyo, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/374 (2011.01); H04N 5/357 (2011.01); H04N 5/365 (2011.01); H01L 27/146 (2006.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/37457 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H04N 5/357 (2013.01); H04N 5/3658 (2013.01); H04N 5/3745 (2013.01);
Abstract
The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.