The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Jun. 14, 2019
Applicant:

Tower Partners Semicoductor Co., Ltd., Toyama, JP;

Inventor:

Masafumi Tsutsui, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/355 (2011.01); H01L 27/146 (2006.01); H04N 5/359 (2011.01); H04N 5/374 (2011.01); H04N 5/369 (2011.01); H04N 5/225 (2006.01); H04N 5/341 (2011.01);
U.S. Cl.
CPC ...
H04N 5/3559 (2013.01); H01L 27/146 (2013.01); H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H04N 5/2254 (2013.01); H04N 5/341 (2013.01); H04N 5/359 (2013.01); H04N 5/369 (2013.01); H04N 5/374 (2013.01);
Abstract

A solid-state image sensor includes pixels, each of which is provided with a light receiving portion, a charge storage portion, a gate electrode, a first trench formed in a region between the light receiving portion and the charge storage portion, a first insulating film provided in the first trench, a transmitting portion, and a light-shielding film covering the charge storage portion, the transmitting portion, and the gate electrode. In a plan view, a distance from an end of the light-shielding film through the transmitting portion to the charge storage portion in a direction from the light receiving portion toward the charge storage portion is longer than a distance from the end of the light-shielding film through the first trench to the charge storage portion.


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