The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Jan. 25, 2019
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventor:

Takeshi Shiomi, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 7/219 (2006.01); H02M 1/38 (2007.01); H02M 3/158 (2006.01); H02M 7/5387 (2007.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 1/38 (2013.01); H02M 3/1588 (2013.01); H02M 7/219 (2013.01); H02M 7/53871 (2013.01); H02M 2001/0054 (2013.01);
Abstract

A rectifying circuit includes a HEMT, a diode connected in antiparallel to the HEMT; and a gate drive circuit, wherein the gate drive circuit includes a gate drive power supply, a first transistor, a second transistor configured to turn on in a complementary manner with the first transistor, a first capacitor including an input capacitance of the HEMT, a second capacitor provided on a pathway configured to charge the input capacitance, a first resistor connected in parallel to the first capacitor, and a second resistor connected in parallel to the second capacitor, the gate drive circuit is configured to control a gate voltage of the HEMT to make the gate voltage lower than a source voltage of the HEMT when the HEMT is turned off.


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