The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Apr. 30, 2018
Applicant:

Sakti3, Inc., Ann Arbor, MI (US);

Inventors:

Hyoncheol Kim, Ann Arbor, MI (US);

Marc Langlois, Ann Arbor, MI (US);

Myoungdo Chung, Ann Arbor, MI (US);

Ann Marie Sastry, Ann Arbor, MI (US);

Yen-Hung Chen, Ann Arbor, MI (US);

Stephen Buckingham, Ypsilanti, MI (US);

Assignee:

Sakti3, Inc., Ann Arbor, MI (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 2/16 (2006.01); H01M 10/04 (2006.01); H01M 10/052 (2010.01); H01M 10/0585 (2010.01); H01M 2/02 (2006.01); H01M 6/40 (2006.01); C23C 14/56 (2006.01); H01M 50/431 (2021.01); H01M 50/10 (2021.01); H01M 50/116 (2021.01); H01M 50/124 (2021.01); H01M 4/04 (2006.01); H01M 4/131 (2010.01); H01M 4/66 (2006.01); H01M 10/0525 (2010.01); H01M 4/525 (2010.01); H01M 4/48 (2010.01); H01M 10/0562 (2010.01);
U.S. Cl.
CPC ...
H01M 50/431 (2021.01); C23C 14/562 (2013.01); H01M 6/40 (2013.01); H01M 10/0436 (2013.01); H01M 10/052 (2013.01); H01M 10/0585 (2013.01); H01M 50/10 (2021.01); H01M 50/116 (2021.01); H01M 50/124 (2021.01); H01M 4/049 (2013.01); H01M 4/0445 (2013.01); H01M 4/0459 (2013.01); H01M 4/131 (2013.01); H01M 4/483 (2013.01); H01M 4/525 (2013.01); H01M 4/661 (2013.01); H01M 4/663 (2013.01); H01M 10/049 (2013.01); H01M 10/0525 (2013.01); H01M 10/0562 (2013.01); H01M 2300/0071 (2013.01); Y02E 60/10 (2013.01); Y02P 70/50 (2015.11); Y02T 10/70 (2013.01); Y10T 29/49108 (2015.01);
Abstract

A thin film solid state battery configured with barrier regions formed on a flexible substrate member and method. The method includes forming a bottom thin film barrier material overlying and directly contacting a surface region of a substrate. A first current collector region can be formed overlying the bottom barrier material and forming a first cathode material overlying the first current collector region. A first electrolyte can be formed overlying the first cathode material, and a second current collector region can be formed overlying the first anode material. The method also includes forming an intermediary thin film barrier material overlying the second current collector region and forming a top thin film barrier material overlying the second electrochemical cell. The solid state battery can comprise the elements described in the method of fabrication.


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