The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Mar. 16, 2020
Toshiba Memory Corporation, Tokyo, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A resistance-change type memory device includes a substrate, a plurality of electrodes arranged in a first direction parallel to an upper surface of the substrate and extending in a second direction intersecting the upper surface, a resistance-change film provided in a third direction that is parallel to the upper surface and intersects the first direction as viewed from the plurality of electrodes, a semiconductor film provided between the plurality of electrodes and the resistance-change film, and an insulating film provided between the plurality of electrodes and the semiconductor film. The resistance-change film has a resistance value that changes when a current flows therein.