The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Feb. 08, 2018
Applicant:

Facebook Technologies, Llc, Menlo Park, CA (US);

Inventors:

Allan Pourchet, Cork, IE;

Pooya Saketi, Cork, IE;

Daniel Brodoceanu, Saarbrucken, DE;

Oscar Torrents Abad, Saarbrucken, DE;

Assignee:

Facebook Technologies, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 25/0753 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A light emitting diode (LED) device includes a semiconductor layer and one or more portions of a wafer on which the semiconductor layer was formed, the other portions of the wafer having been removed by an etching process. The semiconductor layer has a front surface that includes a light emitting area. The remnants of the wafer on which the semiconductor layer are disposed on the front surface of the semiconductor layer and define a trench. The trench is positioned such that the light emitting area emits light into the trench. The remnants of the wafer make the LED device more robust and the trench may reduce crosstalk with adjacent LED devices.


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