The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Aug. 08, 2017
Applicant:
Nuctech Company Limited, Beijing, CN;
Inventors:
Assignee:
NUCTECH COMPANY LIMITED, Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 27/146 (2006.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 27/1463 (2013.01); H01L 27/14605 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01); H01L 31/103 (2013.01); H01L 27/14663 (2013.01);
Abstract
A photodiode device and a photodiode detector are provided. According to an embodiment, the photodiode device may include a first type lightly doped semiconductor base including a first surface and a second surfaces opposite to each other, a first electrode region being first type heavily doped and disposed on the first surface of the semiconductor base, a second electrode region being second type heavily doped and disposed on the second surface of the semiconductor base, wherein the first surface is a light incident surface.