The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11011646 B1

PDF
Full Text
Expired
Date of Patent:
May. 18, 2021

Filed:

Jan. 23, 2019
Applicant:

Guang Dong Dongbond Technology Co., Ltd., Guangdong, CN;

Inventor:

Ping Liu, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/8256 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78687 (2013.01); H01L 21/8256 (2013.01); H01L 27/1218 (2013.01); H01L 29/1606 (2013.01); H01L 29/66045 (2013.01);
Abstract

A TFT structure based on a flexible multi-layer graphene quantum carbon substrate material and a method for manufacturing the same. The TFT structure includes a multi-layer graphene quantum carbon substrate, a first source, a first drain, a first gate insulating layer, and a first gate. The multi-layer graphene quantum carbon substrate includes a first channel area, and a first drain area and a first source area that are located at corresponding recessed positions on the multi-layer graphene quantum carbon substrate that are separated from each other. The first channel area is located between the first drain area and the first source area, the first source is filled in the first source area, the first drain is filled in the first drain area, the first gate insulating layer is disposed on the first channel area, and the first gate is disposed on the first gate insulating layer.


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