The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Jun. 20, 2019
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Qingrong Ren, Beijing, CN;

Guangcai Yuan, Beijing, CN;

Feng Guan, Beijing, CN;

Dongsheng Li, Beijing, CN;

Jianming Sun, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78681 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01);
Abstract

The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.


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