The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Jul. 09, 2019
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Guangyao Li, Beijing, CN;

Lei Huang, Beijing, CN;

Haitao Wang, Beijing, CN;

Jun Wang, Beijing, CN;

Qinghe Wang, Beijing, CN;

Wei Li, Beijing, CN;

Dongfang Wang, Beijing, CN;

Liangchen Yan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); G01N 27/00 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78669 (2013.01); G01N 27/00 (2013.01); H01L 27/1218 (2013.01); H01L 29/66765 (2013.01);
Abstract

The present disclosure provides a thin film transistor, a thin film transistor array, and a method for detecting an object to be detected, wherein the thin film transistor is configured to detect a parameter of an object to be detected bound with a metal ion and includes an active layer, wherein: a carrier of the active layer without a metal element contained in the metal ion bound is of a first mobility, and a carrier of the active layer with the metal element bound is of a second mobility different from the first mobility.


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