The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Jun. 19, 2019
Applicant:

Ohio University, Athens, OH (US);

Inventors:

Savas Kaya, Hilliard, OH (US);

Avinash Karanth, Athens, OH (US);

Talha F. Canan, Athens, OH (US);

Assignee:

Ohio University, Athens, OH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01); H01L 29/78 (2006.01); H03K 19/0948 (2006.01); H03K 19/20 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7855 (2013.01); H01L 29/7393 (2013.01); H03K 19/0948 (2013.01); H03K 19/20 (2013.01);
Abstract

Devices, circuits, and methods for fabricating circuits. A device having ambipolar characteristics includes a semiconductor layer and multiple gates, a source contact, and a drain contact coupled to the semiconductor layer. One channel may have elections as the majority charge carrier and may be formed proximate to one of the gates. Another channel may have holes as the majority charge carrier and be formed proximate another gate. Each of the channels is generally parallel to the other and couples the source contact to the drain contact. The device may be optimized by adjusting the work-functions in one or more of source and drain contacts or gates to compensate for differences in the effective masses of the majority carriers in each of the channels. The ambipolar nature of the devices allows logic circuits to be fabricated using one or two of the devices.


Find Patent Forward Citations

Kaya, Savas. (2021). Ambipolar field-effect device using engineered work-functions (U.S. Patent No. 11011642). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11011642

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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