The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
May. 29, 2019
Sumitomo Chemical Company, Limited, Tokyo, JP;
Taiki Yamamoto, Tsukuba, JP;
Takenori Osada, Hitachi, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
A semiconductor wafer is provided, which has a silicon wafer, a reaction suppressing layer, a stress generating layer and an active layer, the silicon wafer, the reaction suppressing layer, the stress generating layer and the active layer being disposed in an order of the silicon wafer, the reaction suppressing layer, the stress generating layer and the active layer, where the reaction suppressing layer is a nitride crystal layer that suppresses reaction between silicon atoms and group-III atoms, the stress generating layer is a nitride crystal layer that generates compressive stress, the active layer is a nitride crystal layer in which an electronic device is formed, and the semiconductor wafer further has, between the silicon wafer and the reaction suppressing layer, a SiAlN layer having silicon atoms, aluminum atoms and nitrogen atoms as main constituent atoms.