The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Feb. 18, 2019
Applicant:

Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Wuhan, CN;

Inventor:

Peng Jin, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); H01L 21/02194 (2013.01); H01L 21/02282 (2013.01); H01L 21/28158 (2013.01); H01L 29/401 (2013.01); H01L 29/66757 (2013.01); H01L 29/78603 (2013.01); H01L 29/78675 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01);
Abstract

The present invention provides a flexible substrate with a high dielectric-constant film and a manufacturing method thereof. The manufacturing method comprises following steps: providing a flexible substrate; forming a polysilicon layer on the flexible substrate; coating an HfAlOx solution on the polysilicon layer and forming an HfAlOx insulating layer by baking or annealing the HfAlOx solution; forming a metal gate electrode on the HfAlOx insulating layer; and doping and activating the polysilicon layer to form a source/drain electrode. The metal gate electrode is spaced apart from the source/drain electrode by the HfAlOx insulating layer.


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