The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Mar. 29, 2018
Applicant:
Tower Partners Semiconductor Co., Ltd., Uozu, JP;
Inventors:
Masahiro Oda, Hyogo, JP;
Hirohisa Otsuki, Hyogo, JP;
Assignee:
Tower Partners Semiconductor Co., Ltd., Uozu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/369 (2011.01); G01C 3/06 (2006.01); H04N 5/374 (2011.01); G01S 7/4863 (2020.01); G01S 7/4865 (2020.01); G01S 17/08 (2006.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); G01C 3/06 (2013.01); G01S 7/4863 (2013.01); G01S 7/4865 (2013.01); G01S 17/08 (2013.01); H01L 27/14609 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H04N 5/369 (2013.01); H04N 5/374 (2013.01); H01L 27/1463 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H04N 5/378 (2013.01);
Abstract
A plurality of pixels are two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes: two photodiodes each generating charge by photoelectric conversion; first and second memories spaced apart from each other between the two photodiodes as viewed in cross section; a first readout gate reading charge from the two photodiodes to the first memory; and a second readout gate reading charge from the two photodiodes to the second memory.