The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Oct. 15, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Keiichi Sawa, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/7889 (2013.01);
Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similarly to the plurality of first memory cells.


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