The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Feb. 05, 2018
Applicant:
North Carolina State University, Raleigh, NC (US);
Inventor:
Jagdish Narayan, Raleigh, NC (US);
Assignee:
North Carolina State University, Raleigh, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); C30B 25/18 (2006.01); C30B 29/04 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/267 (2006.01); H01L 29/737 (2006.01); H01L 29/76 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); C30B 25/18 (2013.01); C30B 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/1602 (2013.01); H01L 29/2003 (2013.01); H01L 29/267 (2013.01); H01L 29/7373 (2013.01); H01L 29/7606 (2013.01); H01L 29/872 (2013.01);
Abstract
Certain embodiments include a cubic boron nitride (c-BN) device. The c-BN device includes a n/n+ Schottky diode and a n/p/n+ bipolar structure. The n/n+ Schottky diode and the /p/n+ bipolar structure are on a single-crystal diamond platform.