The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Oct. 22, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dae-Lim Kang, Hwaseong-si, KR;

Hyun-Jo Kim, Seoul, KR;

Jong-Mil Youn, Yongin-si, KR;

Soo-Hun Hong, Gunpo-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 21/02293 (2013.01); H01L 27/0248 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/1608 (2013.01); H01L 29/785 (2013.01); H01L 29/7831 (2013.01);
Abstract

An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.


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