The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Jul. 31, 2019
Applicant:

Hitachi Power Solutions Co., Ltd., Hitachi, JP;

Inventors:

Hideaki Takemori, Hitachi, JP;

Hisashi Aoki, Hitachi, JP;

Toru Itagaki, Hitachi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 29/16 (2006.01); H01S 5/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01L 21/76838 (2013.01); H01L 29/1608 (2013.01); H01S 5/0206 (2013.01);
Abstract

A single crystal silicon carbide substrate includes a substrate of a single crystal silicon carbide; a first wiring film and a second wiring film disposed on one side of the substrate and having therebetween an interstice which is formed continuously without being broken from a first end of the one side to a second end of the one side; and an insulating portion disposed in the interstice between the first wiring film and the second wiring film and including a surface texture of the one side exposed by removing using dry etching a surface contaminated layer which is contaminated by at least one of iron, aluminum, chromium, or nickel adhered thereto.


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