The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Dec. 07, 2016
Applicant:

Hitachi Automotive Systems, Ltd., Hitachinaka, JP;

Inventors:

Tokihito Suwa, Hitachinaka, JP;

Seiji Funaba, Hitachinaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/28 (2006.01); H01L 23/433 (2006.01); H01L 25/18 (2006.01); H01L 23/373 (2006.01); H01L 25/07 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/29 (2013.01); H01L 23/28 (2013.01); H01L 23/3107 (2013.01); H01L 23/3735 (2013.01); H01L 23/4334 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/45 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H01L 23/562 (2013.01); H01L 2224/33 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/4809 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

At the time of clamping, excessive stress is applied to bonding parts between substrates and input/output terminals, which may cause the bonding parts to be detached and cause the substrates to be cracked. A lower electrode of a power semiconductor elementis connected via a bonding materialto a first interconnection layerarranged on a lower surface of the power semiconductor element, and an upper electrodeof the power semiconductor elementis connected via the bonding materialto a second interconnection layerarranged on an upper surface. Also, a second main terminalelectrically connected to the upper electrodeof the power semiconductor elementis connected via the bonding materialto the second interconnection layerand contacts and is positioned on a third interconnection layer(spacer) arranged to be parallel to the first interconnection layeron the lower surface. An insulating layeris laminated on a surface of each of the first interconnection layerto the third interconnection layeropposite the bonding material, and a heat dissipating layeris laminated on the insulating layer


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