The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Jun. 26, 2019
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yingbin Hu, Beijing, CN;

Ce Zhao, Beijing, CN;

Yuankui Ding, Beijing, CN;

Wei Song, Beijing, CN;

Jun Wang, Beijing, CN;

Yang Zhang, Beijing, CN;

Wei Li, Beijing, CN;

Liangchen Yan, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G03F 7/20 (2006.01); H01L 21/44 (2006.01); H01L 21/467 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G03F 7/2043 (2013.01); H01L 21/44 (2013.01); H01L 21/467 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78693 (2013.01);
Abstract

The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S, setting an initial width-to-length ratio of the channel region; S, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S, testing the TFT manufactured according to the initial width-to-length ratio; S, determining whether or not the test result satisfies a predetermined condition, performing Sif the test result satisfies the predetermined condition, and performing Sif the test result does not satisfy the predetermined condition; S, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing Sto Sagain.


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