The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Jul. 03, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Yung-Fong Lin, Taoyuan, TW;
Yu-Chieh Chou, New Taipei, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate; forming a silicon layer on the substrate, wherein an edge region of the top surface of the substrate is exposed from the silicon layer; epitaxially growing a GaN-based semiconductor material on the silicon layer and the substrate to form a GaN-based semiconductor layer on the silicon layer and a plurality of GaN-based nodules on the edge region of the top surface of the substrate; and performing a first dry etch step to remove the GaN-based nodules, wherein performing the first dry etch step includes applying a first bias power that is equal to or higher than 1500 W.