The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Apr. 04, 2019
International Business Machines Corporation, Armonk, NY (US);
Svenja Mauthe, Zurich, CH;
Marilyne Sousa, Adliswil, CH;
Fabian Konemann, Zurich, CH;
Kirsten Emilie Moselund, Rueschlikon, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A cavity structure comprises one or more seed surfaces, a first growth path for the growth of a first semiconductor structure from one of the one or more seed surfaces and a second growth path for the growth of a second semiconductor structure from one of the one or more seed surfaces. The cavity structure further comprises at least one opening for supplying precursor materials to the cavity structure. A method can include selectively growing the first semiconductor structure along the first growth path and selectively growing the second semiconductor structure along the second growth path. The first semiconductor structure has a first growth front and the second semiconductor structure has a second growth front. The method can further include merging the first and the second growth front at a border area of the first and the second semiconductor structure.