The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Sep. 04, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventor:

Junya Matsunami, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 5/06 (2006.01); G11C 17/18 (2006.01); G11C 17/14 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 5/063 (2013.01); G11C 17/146 (2013.01); G11C 17/18 (2013.01);
Abstract

According to one embodiment, a semiconductor storage device includes a first wiring, a first resistance change element which is connected to the first wiring, a first nonlinear element which is connected to the first resistance change element, and a second wiring which is connected to the first nonlinear element. In a read operation for the first resistance change element, a voltage between the first wiring and the second wiring increases to a first voltage, and after the voltage between the first wiring and the second wiring increases to the first voltage, the voltage between the first wiring and the second wiring increases to a second voltage which is larger than the first voltage.


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