The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Mar. 05, 2020
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventor:
Ankit Srivastava, San Diego, CA (US);
Assignee:
Qualcomm Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/403 (2006.01); G11C 11/406 (2006.01); G11C 11/405 (2006.01); G11C 11/4097 (2006.01); G11C 11/4074 (2006.01); H03K 7/08 (2006.01); G11C 11/56 (2006.01); G11C 7/12 (2006.01); G11C 5/14 (2006.01); H01L 27/108 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 11/406 (2013.01); G11C 5/145 (2013.01); G11C 7/12 (2013.01); G11C 11/405 (2013.01); G11C 11/4074 (2013.01); G11C 11/4076 (2013.01); G11C 11/4097 (2013.01); G11C 11/565 (2013.01); H01L 27/108 (2013.01); H03K 7/08 (2013.01);
Abstract
A compute-in-memory dynamic random access memory bitcell is provided that includes a first transistor having an on/off state controlled by a weight bit stored across a capacitor. The first transistor is in series with a current-source transistor connected between the first transistor and a read bit line. An activation voltage controls whether the current-source transistor conducts a current when the first transistor is in the on state.