The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Feb. 28, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hiromitsu Komai, Kamakura Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 7/12 (2006.01); G11C 11/409 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01); G11C 7/08 (2013.01); G11C 7/12 (2013.01); G11C 11/409 (2013.01); G11C 2207/2245 (2013.01);
Abstract

A semiconductor storage device includes a plurality of memory cells and a plurality of bit lines connected thereto, a plurality of sense amplifier units respectively connected to the plurality of bit lines, and a cache memory connected to the plurality of sense amplifier units. Each sense amplifier unit includes a sense node and a latch in which data transferred onto the sense node from a corresponding bit line is latched. First data latched in a first sense amplifier unit among the plurality of sense amplifier units is transferred to the cache memory, and second data latched in a second sense amplifier unit among the plurality of sense amplifier units is transferred to the sense node of the first second sense amplifier unit. Thereafter, the second data is latched in the first sense amplifier unit and transferred to the cache memory.


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