Three-dimensional memory device including contact-level bit-line-connection structures and methods of making the same

Abstract

A semiconductor structure includes a memory die, which includes an alternating stack of insulating layers and electrically conductive layers located over a substrate and memory stack structures vertically extending through the alternating stacks. A contact-level dielectric layer embeds drain contact via structures that are electrically connected to a respective drain region and contact-level metal interconnects, and a via-level dielectric embedding drain-to-bit-line connection via structures, bit-line-connection via structures, and pad-connection via structures. A bit-line-level dielectric layer overlies the via-level dielectric layer, and embeds bit lines that contact a respective subset of the drain-to-bit-line connection via structures, and embeds metal pads that contact a respective one of the pad-connection via structures. Each metal pad is electrically connected to a respective bit line through a series connection of a respective pad-connection via structure, a respective contact-level metal interconnect, and a respective bit-line-connection via structure.