The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Feb. 04, 2020
Applicant:

Headway Technologies, Inc., Milpitas, CA (US);

Inventors:

Yan Wu, Cupertino, CA (US);

Wenyu Chen, San Jose, CA (US);

Shohei Kawasaki, Sunnyvale, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/31 (2006.01); G11B 5/39 (2006.01); G11B 5/60 (2006.01); G11B 5/127 (2006.01); G11B 5/245 (2006.01); G11B 19/20 (2006.01); G11B 5/00 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3912 (2013.01); G11B 5/1278 (2013.01); G11B 5/2455 (2013.01); G11B 5/3133 (2013.01); G11B 5/3146 (2013.01); G11B 5/6082 (2013.01); G11B 19/2009 (2013.01); G11B 2005/0018 (2013.01);
Abstract

A spin transfer torque reversal assisted magnetic recording (STRAMR) structure is disclosed wherein two flux change layers (FCL1 and FCL2) are formed within a write gap (WG) and between a main pole (MP) trailing side and trailing shield (TS). Each FCL has a magnetization that flips to a direction substantially opposing a WG field when a direct current of sufficient current density is applied across the STRAMR device thereby increasing reluctance in the WG and producing a larger write field output at the air bearing surface. A reference layer (RL1) is used to reflect spin polarized electrons that exert spin torque on FCL1 and cause FCL1 magnetization to flip. A second reference layer (or the MP or TS) is employed to reflect spin polarize electrons that generate spin torque on FCL2 and flip FCL2 magnetization. Non-spin polarization preserving layers and spin polarization preserving layers are also in the STRAMR structure.


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