The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Mar. 01, 2019
Applicant:

Azbil Corporation, Tokyo, JP;

Inventors:

Masayuki Yoneda, Tokyo, JP;

Hirofumi Tojo, Tokyo, JP;

Assignee:

AZBIL CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0054 (2013.01);
Abstract

A piezoresistive sensor includes a piezoresistive region to which first conductivity type impurity has been introduced, the piezoresistive region being formed in a semiconductor layer; a protection region to which second conductivity type impurity has been introduced, the protection region covering a top of a region in which the piezoresistive region is formed, the protection region being formed in the semiconductor layer; and contact regions to which the first conductivity type impurities have been introduced, the contact regions being connected to the piezoresistive region, the contact regions being formed so as to reach a surface of the semiconductor layer except a region in which the protection region is formed, in which the following inequality holds: impurity concentration of the piezoresistive region<impurity concentration of the protection region<impurity concentrations of the contact regions.


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