The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Dec. 28, 2019
Applicant:

Shaanxi Normal University, Shaanxi, CN;

Inventors:

Fei Gao, Shaanxi, CN;

Rongrong Gao, Shaanxi, CN;

Hao Liu, Shaanxi, CN;

Shengzhong Liu, Shaanxi, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 14/08 (2006.01); C23C 14/35 (2006.01); C23C 14/18 (2006.01); C23C 14/16 (2006.01);
U.S. Cl.
CPC ...
C23C 14/087 (2013.01); C23C 14/16 (2013.01); C23C 14/18 (2013.01); C23C 14/35 (2013.01); H01L 21/02381 (2013.01); H01L 21/02403 (2013.01); H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02598 (2013.01); H01L 21/02631 (2013.01);
Abstract

Disclosed is a CuO/Se composite film, in which Se with low melting point (221° C.) and strong photosensitivity is introduced into CuO, providing the film with fewer defects and excellent optical, electrical and photoelectric properties. In the preparation method of the invention, Se is introduced into CuO and melted by low-temperature annealing, and then the molten Se can infiltrate CuO to eliminate or reduce defects in the CuO film such as voids and dangling bonds, thereby improving optical, electrical and photoelectric properties of the film and overcoming the shortcomings that CuO has poor crystallinity, high melting point and is decomposed at a high temperature.


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