The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

May. 29, 2018
Applicants:

Seagate Technology Llc, Cupertino, CA (US);

Board of Regents the University of Texas System, Austin, TX (US);

Inventors:

Xiaomin Yang, Livermore, CA (US);

Austin Patrick Lane, Austin, TX (US);

Michael Joseph Maher, Minneapolis, MN (US);

Gregory Blachut, San Jose, CA (US);

Assignee:

Seagate Technology LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09D 183/10 (2006.01); G03F 7/00 (2006.01); B82Y 40/00 (2011.01); G03F 7/16 (2006.01); B82Y 10/00 (2011.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
C09D 183/10 (2013.01); G03F 7/0002 (2013.01); B81C 1/00031 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/16 (2013.01);
Abstract

A method comprises forming a first structured pattern having a first line width on a substrate. A polymer brush is deposited on the structured pattern, which is annealed a first time at a first temperature and then annealed a second time at a second temperature higher than the first temperature. A block copolymer is deposited on the structured pattern and polymer brush, and aligned first block and second block structures are formed on the structured pattern and polymer brush. The first block structures and portions of the polymer brush and the structured pattern positioned beneath the first block structures are removed, and the substrate between the second block structures is exposed. The second block structures are then removed to form a second structured pattern in the substrate having a second line width, the second line width being smaller than the first line width.


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