The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jun. 16, 2017
Applicant:
Chirp Microsystems, Inc., Berkeley, CA (US);
Inventors:
David Horsley, Berkeley, CA (US);
Andre Guedes, San Francisco, CA (US);
Stefon Shelton, Oakland, CA (US);
Richard Przybyla, Emeryville, CA (US);
Meng-Hsiung Kiang, Berkeley, CA (US);
Assignee:
CHIRP MICROSYSTEMS, INC., Berkeley, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/04 (2006.01); H01L 41/047 (2006.01); H01L 41/053 (2006.01); H01L 41/18 (2006.01); H01L 41/31 (2013.01); H01L 41/253 (2013.01); H01L 41/29 (2013.01); B06B 1/06 (2006.01);
U.S. Cl.
CPC ...
H01L 41/047 (2013.01); B06B 1/0651 (2013.01); H01L 41/053 (2013.01); H01L 41/18 (2013.01); H01L 41/253 (2013.01); H01L 41/29 (2013.01); H01L 41/31 (2013.01);
Abstract
A piezoelectric micromachined ultrasonic transducer (pMUT) device may include a piezoelectric membrane transducer designed to have lower sensitivity to residual stress and reduced sensitivity to geometric variations arising from the backside etching process used to release the membrane. These designs allow some of its key feature to be adjusted to achieve desired characteristics, such as pressure sensitivity, natural frequency, stress sensitivity, and bandwidth.