The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jun. 15, 2020
Applicant:
Phase Sensitive Innovations, Inc., Newark, DE (US);
Inventor:
Peng Yao, Newark, DE (US);
Assignee:
Phase Sensitive Innovations, Inc., Newark, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/024 (2014.01); H01L 27/144 (2006.01); H01L 31/0304 (2006.01); H01L 31/105 (2006.01); H01L 31/18 (2006.01); H01Q 3/26 (2006.01); H01Q 21/06 (2006.01); H01L 31/02 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 31/024 (2013.01); H01L 27/1446 (2013.01); H01L 31/02005 (2013.01); H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/105 (2013.01); H01L 31/1844 (2013.01); H01Q 3/2676 (2013.01); H01Q 21/062 (2013.01); H01L 23/3732 (2013.01);
Abstract
A photodiode device and method of manufacturing the same are disclosed. A stack of functional layers of the photodiode device, formed of crystalline semiconductor material, may be formed on a highly thermally conductive substrate, such as diamond or SiC. The stack of functional layers may be in contact with or close proximity to the thermally conductive substrate to thereby provide an efficient thermal conductive path between the functional layers and an external source, thereby mitigating problems that may result from overheating the photodiode device.