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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11004985 B1

PDFFull Text
Date of Patent:
May. 11, 2021

Filed:

Feb. 18, 2020

Semiconductor device having multi-thickness nanowire

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung Hun Lee, Hwaseong-si, KR;

Dong Woo Kim, Incheon, KR;

Dong Chan Suh, Suwon-si, KR;

Sun Jung Kim, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Lee IP Law, P.C.

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); B82Y 10/00 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/775 (2013.01); H01L 29/068 (2013.01); H01L 29/66742 (2013.01); H01L 29/78651 (2013.01); H01L 29/78684 (2013.01); Y10S 977/762 (2013.01); Y10S 977/765 (2013.01); Y10S 977/938 (2013.01);
Abstract

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

Find Patent Forward Citations

Lee, Seung. (2021). Semiconductor device having multi-thickness nanowire (U.S. Patent No. 11004985). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11004985

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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