The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Aug. 27, 2019
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Assignee:
IMEC vzw, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/737 (2006.01); H01L 21/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 21/0243 (2013.01); H01L 21/02381 (2013.01); H01L 27/0623 (2013.01); H01L 29/0665 (2013.01); H01L 29/0817 (2013.01); H01L 29/66318 (2013.01); H01L 21/02538 (2013.01);
Abstract
The disclosed technology generally relates to integrated circuit devices having at least one transistor, and methods of fabricating the same. In one aspect, an integrated circuit device can be produced from a silicon substrate and can include at least one nano-ridge transistor formed from III-V semiconducting crystal portions. The III-V portions can be grown epitaxially from the silicon substrate using an intermediate portion which can be adapted to produce aspect ratio trapping. The nano-ridge transistor can have a reduced footprint on the silicon substrate, may be adapted for power RF applications, and can be combined with MOS or CMOS transistors within one and a same integrated circuit.